منابع مشابه
Precipitation in Fe- or Ni-implanted and annealed GaAs
We report the formation of metal/semiconductor composites by ion implantation of Fe and Ni into GaAs and a subsequent anneal to nucleate clusters. Electron diffraction experiments and high resolution transmission electron microscopy images indicate that these precipitates are probably hexagonal and metallic Fe3GaAs or Ni3GaAs with orientation relationship to GaAs of ~101̄0!ppi~422̄!m , ~0002!ppi~...
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SiC/Fe and MoSi2/Ni interfaces are investigated using first principles calculations in order to determine the structure of the interfaces and calculate ideal adhesion energies. As a baseline for comparison, calculations were also performed on the Cr/Fe interface, which shows strong adhesion, even stronger than the intrinsic adhesion of Fe. Both ceramic/metal interfaces show good adhesion. Evide...
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High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...
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Nanometric Carbid Silicon (SiC) supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD) technique. The synthesized nanomaterials (catalysts and CNT...
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ژورنال
عنوان ژورنال: Defect and Diffusion Forum
سال: 1991
ISSN: 1662-9507
DOI: 10.4028/www.scientific.net/ddf.66-69.1497